Qualcomm Announces Snapdragon 835 on 10nm FinFET chip With QC 4.0

Qualcomm Snapdragon 835

Qualcomm has announced the Snapdragon 835 partnering with Samsung. It will be based upon Samsung’s newest 10nm FinFET process chip. The company promises that it will improve performance and energy over the Snapdragon 820 and 821’s 14nm FinFET process.


According to company, the new design promises up to 30 percent more area efficient and offers 27 percent improved performance or 40 percent less power consumption. The reduced footprint will allow hardware manufacturers to make smaller devices or include other components.

The Snapdragon 835 processor will also be the first to include the new Quick Charge 4. It has new Dual Charge parallel charge technology. Qualcomm claims Quick Charge 4 provides 20 percent faster charging and 30 percent higher efficiency than Quick Charge 3. Qualcomm’s tagline for it is “5 hours of use from just 5 minutes of charging.”

Unlike Quick Charge 3.0, 4.0 is fully compatible with USB Type-C, including USB Power Delivery, and Qualcomm says it is also compliant with Google’s new specifications for Type-C charging.

The Snapdragon 835 is expected to be in devices in the first half of 2017.




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